High efficiency a-Si:H based solar cells employing novel p-nc-SiC:H buffer layers prepared by the mercury-sensitized photo-CVD technique = 수은증감 광-CVD 법으로 제작한 새로운 p형 나노결정 실리콘카바이드 완충층을 이용한 고효율 비정질 실리콘을 바탕으로 한 태양전지의 제작에 관한 연구

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Highly conductive boron-doped nanocrystalline silicon-carbide (p-nc-SiC:H) films were successfully prepared by the mercury-sensitized photo-CVD using ethylene gas as a carbon source. A dark conductivity as high as $5×10^{-1} S/cm^{-1}$, together with an $E_{04}$ bandgap of 2.1 eV, was obtained. From TEM image and Raman spectrum, it is considered that this nanocrystalline film consists of ~ 10 nm-sized crystalline silicon grains embedded in amorphous silicon-carbide matrix. Considering the low $H_{2}$ dilution ratio of 15 ~ 30, this high conductivity shows the possibility of producing higher quality p-nc-SiC:H thin films with this method. Each effect of the film thickness, hydrogen dilution, ethylene addition, boron doping, substrate temperature variation, and mercury bath temperature variation on the formation of nc-SiC:H films was investigated by inspecting the electrical, optical, and structural properties. By virtue of these efforts, we found that the hydrogen, carbon, and boron atoms introduced to the growing surface play important roles on the film properties, respectively. Hydrogen atoms introduced to the growing surface improve the crystallinity of the SiC:H films. High carbon and/or boron content suppress the nucleation of nanocrystallites. The electronic study on the nc-SiC:H films was performed for the first time: The paramagnetic spin density is directly proportion to the crystallinity due to surface-related DB states under the constant carbon content. However, the effect of C-DB states surpass that of surface-related DB states with the carbon content variation. Also, it was found that two temperature parameters, the substrate temperature and mercury bath temperature, influence strongly the characteristics of the films. It was found that the surface diffusion of precursors, which contributes to the nanocrystalline growth, depends considerably upon the substrate temperature. A considerable high quality nanocrystalline growth at 120℃ suggests a low...
Advisors
Lim, Koeng-Suresearcher임굉수researcher
Description
한국과학기술원 : 전기및전자공학전공,
Publisher
한국과학기술원
Issue Date
2002
Identifier
177302/325007 / 000975103
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 전기및전자공학전공, 2002.8, [ vi, 124, [1] p. ]

Keywords

buffer layer; mercury-sensitized photo-CVD; a-Si:H based solar cell; nanocrystal silicon-carbide; ESR measurements; ESR 분석; 완충층; 수은증감 광-CVD; 비정질 실리콘을 바탕으로 한 태양전지; 나노결정 실리콘카바이드

URI
http://hdl.handle.net/10203/36007
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=177302&flag=dissertation
Appears in Collection
EE-Theses_Ph.D.(박사논문)
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