Design of CMOS IC controller for class-E resonant and non-resonant boost power converters

Abstract

One-chip controllers have been implemented for switching power converters. One is the class-E inverter controller implemented in a 0.35 ㎛ standard CMOS process. The control IC generates a gate signal to turn on or off the IGBT switch of the class-E inverter power supply for driving a magnetron load which generates 2.45 GHz microwave for heating. It provides active power factor correction, soft start, and thermal protection. In addition, we proposed several designs to resolve the problem of high resonant voltage stress across the switch in class-E operation, which are appended at the end of this thesis. The other is the single-chip boost DC/DC converter implemented in a 0.5 ㎛ 40 V power BiCMOS process. All the power switches as well as control and gate drive circuits have been integrated into one chip. The output voltage ranging from 12 V to 20 V is obtained from the battery input voltage of around 3.7 V. The overall chip area is 1780 ㎛ $\times$ 2300 ㎛.