Unified model for deep sub-micron on-chip interconnects including non-orthogonal architecture비직교형 아키텍쳐를 포함하는 깊은 서브 마이크론 On-chip interconnects 를 위한 통합 모델

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dc.contributor.advisorLee, Kwy-Ro-
dc.contributor.advisor이귀로-
dc.contributor.authorSim, Sang-Pil-
dc.contributor.author심상필-
dc.date.accessioned2011-12-14-
dc.date.available2011-12-14-
dc.date.issued2003-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=231772&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/35194-
dc.description학위논문(박사) - 한국과학기술원 : 전기및전자공학전공, 2003.2, [ xii, 117 p. ]-
dc.description.abstractOver the past decades, the relentless CMOS technology scaling has resulted in remarkable improvement in transistor speed, achieving $f_τ ≥ 100GHz$ for gate length ≤ 0.1㎛ But the delay due to clock distribution and global interconnect has limited the I/O speed in keeping up with the core speed improvement trend. Increasing interconnect delay and signal integrity problems in ULSI systems make accurate understanding and modeling of wires more critical than ever. In this dissertation, we investigate the characteristics of on-chip interconnects in high-performance digital chips, leading to a scheme for modeling and parameter extraction of capacitance and inductance. The motivation behind our model is to provide a computationally efficient yet accurate analytical model, which is applicable not only to the conventional orthogonal routing (Manhattan style) but also to the general non-orthogonal routing known as X-architecture. In the first half of this dissertation, we propose a unified quasi-3D capacitance model based on a novel concept of “effective width” ($W_{eff}$). The model is derived from an analytical 2D model combined with a new analytical “wall-to-wall” model. $W_{eff}$ is interpreted as an electrostatic width of a crossover line, which is larger than the line’s physical width due to the fringing fields. With $W_{eff}$, complicated 3D structures are readily decomposed as a series of successive 2D structures, leading to efficient capacitance extraction. To cope with new technology featuring multi-layer dielectrics and non-ideal vertical profiles, effective dielectric constants and effective geometrical parameters are incorporated into the model. Finally, our model is extended to general non-orthogonal wires, which have arbitrary crossover angles. By integrating 2D and 3D models with new process and architecture parameters, the proposed capacitance model is applicable to any fabrication technology and chip layout. It is confirmed to be highly reliable by exte...eng
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectinductance-
dc.subjectmodeling-
dc.subjectintegrated circuit interconnections-
dc.subjecthigh-speed integrated circuits-
dc.subject고속 집적 회로-
dc.subject인덕턴스-
dc.subject모델링-
dc.subject직접 회로 상호 연결-
dc.subjectelectromagnetic coupling-
dc.titleUnified model for deep sub-micron on-chip interconnects including non-orthogonal architecture-
dc.title.alternative비직교형 아키텍쳐를 포함하는 깊은 서브 마이크론 On-chip interconnects 를 위한 통합 모델-
dc.typeThesis(Ph.D)-
dc.identifier.CNRN231772/325007 -
dc.description.department한국과학기술원 : 전기및전자공학전공, -
dc.identifier.uid000995217-
dc.contributor.localauthorLee, Kwy-Ro-
dc.contributor.localauthor이귀로-
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EE-Theses_Ph.D.(박사논문)
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