Effect of proton irradiation damage on SnAg/Cu microbump simulation using Monte Carlo method

Abstract

The requirements for small size and high performance of electronic devices in space applications have made microbump technology a popular topic in current research. Based on the Monte Carlo method, using the SRIM program to simulate the irradiation effects on microbumps can effectively shorten the test period and avoid the chance problem of the actual test. Therefore, in this study, the SRIM program was used to simulate the atomic distribution and energy loss inside the microbump for different incident ions, incident energy, and incident angles. The results show that at the same incident energy and incident angle, ions with larger relative atomic mass are incident closer and cause more damage to the microbump. Meanwhile, in a certain range, the increase of incident energy significantly increases the damage inside the microbumps, but when the incident energy reaches a certain value, the damage instead appears to decrease to a certain extent due to the existence of Bragg's law. In addition, the incident distance and the range of energy release decrease with the increase of the incident angle.