TWO-TERMINAL BIRISTOR HAVING POLYSILICON EMITTER LAYER INSERTED THEREIN AND MANUFACTURING METHOD THEREFOR

Abstract

Disclosed are a two-terminal biristor having a polysilicon emitter layer inserted therein and a manufacturing method therefor. The two-terminal biristor manufacturing method according to an embodimentof the present invention comprises the steps of: forming a first semiconductor layer of a first type on a substrate; forming a second semiconductor layer of a second type on the first semiconductor layer; forming a third semiconductor layer of the first type on the second semiconductor layer; and forming a polysilicon layer of the first type on the third semiconductor layer.