Hybridization of organic molecules with a Ge(100) surface = Ge(100) 반도체 표면과 유기분자들과의 하이브리드 형성에 관한 연구

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Adsorption and thermal stability of ethylene on Ge(100) The adsorption structures and thermal desorption behavior of ethylene ($C_2H_4$) on Ge(100) have been investigated using scanning tunneling microscopy (STM) and temperature programmed desorption (TPD) in ultrahigh vacuum (UHV). It is indicated on the basis of STM study that $C_2H_4$ molecule initially adsorbs onto the Ge(100) surface with two types of configurations: (i) on-top of a single Ge-Ge dimer (on-top) and (ii) paired end-bridge between two neighboring Ge dimers in the same dimer row (paired end-bridge). TPD measurements show that chemisorbed $C_2H_4$ desorbs from Ge(100) nondissociatively with two different desorption features, denoted as α (385 K) and β (405 K). STM measurements after annealing at various Ge surface temperatures indicate that the α state (β state) corresponds to the on-top (paired end-bridge) configuration. STM-induced selective desorption of ethylene from $C_2H_4$/Ge(100) surfaces A scanning-tunneling microscope has been used to induce efficient local desorption of ethylene from Ge(100) at low current (100 pA), sample biases (~ -3.4 V), and room temperature. The desorption probability was measured as a function of both tunneling current and sample bias voltages. The desorption behavior may be explained by positive ion resonant inelastic tunneling mechanism. We have demonstrated that only on-top configurations of ethylene on Ge(100) desorb at -3.0 V of sample bias where the paired end-bridge retains. It is related to the different binding energy as well as the position of $1b_{3g}$ orbital (σGe-C) which is closer to Fermi level for the on-top configuration compared to the paired end-bridge configuration. Surface reactions of bifunctional molecules; ethylene diamine and 1,4-phenylene diisocyanate on Ge(100)-2×1 Surface reactions of bifunctional molecules, ethylene diamine and 1,4-phenylene diisocyanate, have been investigated on the Ge(100)-2×1 using multiple internal reflection i...
Kim, Se-Hunresearcher김세훈researcher
한국과학기술원 : 화학과,
Issue Date
244509/325007  / 020015060

학위논문(박사) - 한국과학기술원 : 화학과, 2005.2, [ ix, 72 p. ]


surface reaction; layer-by-layer growth; adsorption; STM; Ge(100)m; 게르마늄 표면; 표면반응; 초미세 층간 성장; 흡착; 주사탐침 현미경

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