Photobleaching photoacid generators and design of new matrix resin = 광표백 광산발생제와 새로운 메트릭스의 설계

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Syntheses of new photobleacing photoacid generators and matrix polymers were attempted to meet the upcoming demand of next generation lithography. First, for the photobleaching photoacid generators, cyclopropyl group was introduced into the photoacid generators in order to reduce absorbance at 193-nm wavelength right after photoacid generators absorbed the light and $H^+$ was generated. Several cyclopropyl group containing sulfonium triflates were synthesized for this photobleaching effect. Of these compounds, cyclopropyl diphenylsulfonium trifluoromethanesulfonate(CpDPSTf) was well compatible with the PAGs requisites and showed the improved pattern shape without scum as well as the decrease of absorbance at 193nm wavelength after exposure; Comparing with triphenylsulfonium trifluoromethanesulfonate (TPSTf), recently widely used, there were no rounding appearance and more clear developing feature at the bottom of pattern even at 0.12㎛ L/S pattern when using conventional illumination method. We could infer that this was the contribution of the volatile propene formed from the cleavage of S-C of cyclopropyl faster than the cleavage of S-C of phenyl group. Second, for the low molecular resist material, 2-cyclohexylmethyl-malonic acid di(t-butyl cholate) ester was synthesized as a low-molecular-weight resist material for ArF excimer laser lithography. It is confirmed to be amorphous by X-ray diffraction data and has good transmittance at 193 nm. Dry etch resistance of this material to $CF_4$-reactive ion etching is comparable to that of poly(4-hydroxystyrene) and adhesion property calculated from the work of adhesion is also acceptable in comparison with the novolac-based resist. The resist formulated with this material and 2 wt% of triphenylsulfonium triflate showed 0.9㎛ line and space patterns at a dose of $20 mJ cm^{-2}$ using a mercury-xenone lamp in a contact printing mode and a standard developer. Third, for the environmentally friendly negative resist mate...
Kim, Jin-Baekresearcher김진백researcher
한국과학기술원 : 화학과,
Issue Date
231031/325007  / 000995329

학위논문(박사) - 한국과학기술원 : 화학과, 2003.8, [ vi, 103 p. ]


Photoacid Generators; 메트릭스; 광산발생제

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