DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Jaeyong | ko |
dc.contributor.author | Kim, Seongkwang | ko |
dc.contributor.author | Suh, Yoon-Je | ko |
dc.contributor.author | Lee, Jisung | ko |
dc.contributor.author | Choi, Joonyoung | ko |
dc.contributor.author | Park, Juhyuk | ko |
dc.contributor.author | Kim, Joon Pyo | ko |
dc.contributor.author | Kim, Bong Ho | ko |
dc.contributor.author | Jo, Younjung | ko |
dc.contributor.author | Park, Seung-Young | ko |
dc.contributor.author | Kim, Jongmin | ko |
dc.contributor.author | Kim, Sanghyeon | ko |
dc.date.accessioned | 2023-11-22T06:03:36Z | - |
dc.date.available | 2023-11-22T06:03:36Z | - |
dc.date.created | 2023-11-22 | - |
dc.date.issued | 2023-06 | - |
dc.identifier.citation | 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 | - |
dc.identifier.uri | http://hdl.handle.net/10203/315038 | - |
dc.description.abstract | Cryogenic RF transistors and routing circuits operating with extremely low power are essential as control/readout electronics for future large-scale quantum computing (QC) systems. In this work, we demonstrate 3D stackable InGaAs HEMT-based cryogenic RF transistors and routing circuits integrated with Nb superconductors for ultra-low power operation. As a result, we achieve a record high unity current gain cutoff frequency (fT) of 601 GHz and unity power gain cutoff frequency (fMAX) of 593 GHz at 4 K with the smallest power dissipation among ever reported cryogenic RF transistors. Furthermore, using a novel structure with Nb superconductor and III-V heterostructure hybrid interconnect of the routing circuits, we achieve high-performance routing circuits with 41% lower power dissipation compared to the conventional structure. | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Cryogenic RF Transistors and Routing Circuits Based on 3D Stackable InGaAs HEMTs with Nb Superconductors for Large-Scale Quantum Signal Processing | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-85167573931 | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 | - |
dc.identifier.conferencecountry | JA | - |
dc.identifier.conferencelocation | Kyoto | - |
dc.identifier.doi | 10.23919/VLSITechnologyandCir57934.2023.10185262 | - |
dc.contributor.localauthor | Kim, Sanghyeon | - |
dc.contributor.nonIdAuthor | Suh, Yoon-Je | - |
dc.contributor.nonIdAuthor | Lee, Jisung | - |
dc.contributor.nonIdAuthor | Choi, Joonyoung | - |
dc.contributor.nonIdAuthor | Jo, Younjung | - |
dc.contributor.nonIdAuthor | Park, Seung-Young | - |
dc.contributor.nonIdAuthor | Kim, Jongmin | - |
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