Radiation hardness performance of 2 Gbit LPDDR SDRAM fabricated on epitaxial wafer for space applications

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Radiation hardness performance of 2 Gbit low-power double data rate synchronous dynamic random access memories (LPDDR SDRAMs) fabricated on a 4 μm epitaxial layer (38 nm CMOS technology) are presented.
Publisher
Institute of Electrical and Electronics Engineers Inc.
Issue Date
2016-07
Language
English
Citation

2016 IEEE Radiation Effects Data Workshop, REDW 2016

ISSN
2154-0519
DOI
10.1109/NSREC.2016.7891729
URI
http://hdl.handle.net/10203/312835
Appears in Collection
RIMS Conference Papers
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