DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Jaeyong | ko |
dc.contributor.author | Kim, Seong Kwang | ko |
dc.contributor.author | Kim, Jongmin | ko |
dc.contributor.author | Lee, Jisung | ko |
dc.contributor.author | Kim, Joon Pyo | ko |
dc.contributor.author | Kim, Bong Ho | ko |
dc.contributor.author | Suh, Yoon-Je | ko |
dc.contributor.author | Geum, Dae-Myeong | ko |
dc.contributor.author | Park, Seung-Young | ko |
dc.contributor.author | Kim, Sanghyeon | ko |
dc.date.accessioned | 2023-08-31T10:00:31Z | - |
dc.date.available | 2023-08-31T10:00:31Z | - |
dc.date.created | 2023-02-24 | - |
dc.date.issued | 2022-12 | - |
dc.identifier.citation | 2022 International Electron Devices Meeting, IEDM 2022, pp.451 - 454 | - |
dc.identifier.issn | 2380-9248 | - |
dc.identifier.uri | http://hdl.handle.net/10203/312080 | - |
dc.description.abstract | Future large-scale quantum computing systems such as millions of qubits are expected to require highly scalable architecture. One of the possible and promising solutions is the three-dimensional (3D) co-integration of qubits and control/readout electronics on the same cryogenic chip. In this work, we demonstrate 3D stackable cryogenic InGaAs high-electron-mobility transistors (HEMTs) with extremely low power consumption. Futhermore, to control and readout millions of qubits with a limited cooling budget, we report the basic concept of the 3D integrated cryogenic DC and RF multiplexer/demultiplexer based on InGaAs HEMT for the first time. The 3D integrated InGaAs HEMTs with a gate length of 110 mathrm{~nm} show a unity current gain cutoff frequency (f mathrm{~T}) of 514GHz and unity power of 497GHz is the record-high value with the smallest power consumption ever reported in cryogenic RF transistors. The 3D stackable multiplexer/demultiplexer exhibit excellent routing capabilities both on DC and RF signal at 5 mathrm{~K}. Such 3D integrated multiplexer/demultiplexer will be one of the breakthrough technologies to successfully implement future large-scale quantum computing systems. | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | 3D Stackable Cryogenic InGaAs HEMT-Based DC and RF Multiplexer/Demultiplexer for Large-Scale Quantum Computing | - |
dc.type | Conference | - |
dc.identifier.wosid | 000968800700022 | - |
dc.identifier.scopusid | 2-s2.0-85147521432 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 451 | - |
dc.citation.endingpage | 454 | - |
dc.citation.publicationname | 2022 International Electron Devices Meeting, IEDM 2022 | - |
dc.identifier.conferencecountry | US | - |
dc.identifier.conferencelocation | San Francisco, CA | - |
dc.identifier.doi | 10.1109/IEDM45625.2022.10019363 | - |
dc.contributor.localauthor | Kim, Sanghyeon | - |
dc.contributor.nonIdAuthor | Jeong, Jaeyong | - |
dc.contributor.nonIdAuthor | Kim, Seong Kwang | - |
dc.contributor.nonIdAuthor | Kim, Jongmin | - |
dc.contributor.nonIdAuthor | Lee, Jisung | - |
dc.contributor.nonIdAuthor | Kim, Joon Pyo | - |
dc.contributor.nonIdAuthor | Kim, Bong Ho | - |
dc.contributor.nonIdAuthor | Suh, Yoon-Je | - |
dc.contributor.nonIdAuthor | Geum, Dae-Myeong | - |
dc.contributor.nonIdAuthor | Park, Seung-Young | - |
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