A chemical reaction path design for the atomic layer deposition of tantalum nitride thin films

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dc.contributor.authorKwon, Jung-Daeko
dc.contributor.authorPark, Jin-Seongko
dc.contributor.authorLee, Han-Choonko
dc.contributor.authorKang, Sang-Wonko
dc.date.accessioned2008-02-18T06:44:46Z-
dc.date.available2008-02-18T06:44:46Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-06-
dc.identifier.citationELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.9, pp.G282 - G284-
dc.identifier.issn1099-0062-
dc.identifier.urihttp://hdl.handle.net/10203/3062-
dc.description.abstractThe two-step atomic layer deposition of tantalum nitride (TaN) in which the deposition cycle involved two chemical reaction steps, the formation of elemental tantalum (Ta) by reducing tantalum-pentafluoride (TaF5) with hydrogen plasma and the subsequent nitridation of the preformed Ta with NH3, was performed at 350 degrees C. Cubic-TaN with a Ta/N ratio of 1:1 was achieved independently of the nitridation time, and the fluorine content of the films was below the detection limit using Auger electron spectroscopy. As a result, the electrical resistivity of the TaN film was reduced below 500 mu Omega cm by suppressing the formation of Ta3N5. (c) 2006 The Electrochemical Society.-
dc.description.sponsorshipBrain Korea 21 and System IC 2010 supported this work. Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherElectrochemical Soc Inc-
dc.subjectDIFFUSION BARRIER-
dc.subjectCU METALLIZATION-
dc.subjectREDUCING AGENT-
dc.subjectTAN-
dc.subjectGROWTH-
dc.subjectCOPPER-
dc.titleA chemical reaction path design for the atomic layer deposition of tantalum nitride thin films-
dc.typeArticle-
dc.identifier.wosid000239283500021-
dc.identifier.scopusid2-s2.0-33746546306-
dc.type.rimsART-
dc.citation.volume9-
dc.citation.issue9-
dc.citation.beginningpageG282-
dc.citation.endingpageG284-
dc.citation.publicationnameELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.identifier.doi10.1149/1.2216593-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKang, Sang-Won-
dc.contributor.nonIdAuthorKwon, Jung-Dae-
dc.contributor.nonIdAuthorPark, Jin-Seong-
dc.contributor.nonIdAuthorLee, Han-Choon-
dc.type.journalArticleArticle-
dc.subject.keywordPlusDIFFUSION BARRIER-
dc.subject.keywordPlusCU METALLIZATION-
dc.subject.keywordPlusREDUCING AGENT-
dc.subject.keywordPlusTAN-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusCOPPER-
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