DC Field | Value | Language |
---|---|---|
dc.contributor.author | Song, Yong-Ho | ko |
dc.contributor.author | Yeo, Hwan-Seop | ko |
dc.contributor.author | Sung, Chan-Young | ko |
dc.contributor.author | Kim, Byung Su | ko |
dc.contributor.author | Ahn, Seonghun | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.date.accessioned | 2023-03-25T04:01:47Z | - |
dc.date.available | 2023-03-25T04:01:47Z | - |
dc.date.created | 2023-02-20 | - |
dc.date.created | 2023-02-20 | - |
dc.date.created | 2023-02-20 | - |
dc.date.created | 2023-02-20 | - |
dc.date.issued | 2023-03 | - |
dc.identifier.citation | ADVANCED MATERIALS INTERFACES, v.10, no.8 | - |
dc.identifier.issn | 2196-7350 | - |
dc.identifier.uri | http://hdl.handle.net/10203/305786 | - |
dc.description.abstract | Controlling the site, size, and shape of group III-nitride quantum dots (QDs) is critical for the development of mass-producible single-photon sources for scalable quantum technologies operable at room temperature. Herein, a methodology is proposed for fabricating high-purity single QD emitters by controlling site-controlled GaN micro-pyramid structures with a high degree of uniformity and symmetry. To achieve a uniformly grown, hexagonally symmetric micro-pyramid array, the H-2/N-2 carrier gas ratio, growth temperature, and V/III ratio are controlled to attain self-limited growth regime and self-limited width at the GaN pyramid apex. A thin InGaN layer is consecutively grown on a pyramid array under the growth condition for enhancing the growth rate anisotropy to hinder the growth of InGaN quantum wells (QWs) at semi-polar facets. As a result, single-photon emission is observed from apex QD with suppressed background side QW emission while maintaining more than 90% high hexagonal QD symmetry over the large area of the wafer. | - |
dc.language | English | - |
dc.publisher | WILEY | - |
dc.title | Highly Uniform Array of Hexagonally Symmetric Micro-Pyramid Structures for Scalable and Single Quantum Dot Emitters | - |
dc.type | Article | - |
dc.identifier.wosid | 000920370000001 | - |
dc.identifier.scopusid | 2-s2.0-85147450247 | - |
dc.type.rims | ART | - |
dc.citation.volume | 10 | - |
dc.citation.issue | 8 | - |
dc.citation.publicationname | ADVANCED MATERIALS INTERFACES | - |
dc.identifier.doi | 10.1002/admi.202202085 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Sung, Chan-Young | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | cathodoluminescence | - |
dc.subject.keywordAuthor | hexagonally symmetric quantum dots | - |
dc.subject.keywordAuthor | highly uniform pyramid arrays | - |
dc.subject.keywordAuthor | InGaN | - |
dc.subject.keywordAuthor | photoluminescence | - |
dc.subject.keywordAuthor | self-limited growth | - |
dc.subject.keywordAuthor | site-controlled pyramid structures | - |
dc.subject.keywordPlus | SELF-LIMITING GROWTH | - |
dc.subject.keywordPlus | PHOTON EMISSION | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.