A Novel Structured Single Device Neuron for Low Standby Power and Compact System Application

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We propose a single device neuron that utilizes a ferroelectric layer, a split gate, and a truncated floating gate structure. The proposed neuron device, named Single-Device Leaky-FeFET (SD L-FeFET), successfully emulates the neuronal dynamics for both excitatory and inhibitory connections while reducing the standby power by eliminating tail current. A spiking neural network (SNN) using the newly developed SD L-FeFET neuron shows MNIST handwriting digit pattern recognition of 92.5% and face recognition of 91.7%, which is comparable performance to the state-of-art SNN simulation results using conventional complex cell designs.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2023-03
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.44, no.3, pp.528 - 531

ISSN
0741-3106
DOI
10.1109/LED.2023.3240419
URI
http://hdl.handle.net/10203/305778
Appears in Collection
EE-Journal Papers(저널논문)
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