DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jiho | ko |
dc.contributor.author | Lee, Sang-Han | ko |
dc.contributor.author | Kang, Gyeong-Gu | ko |
dc.contributor.author | Kim, JaeHyun | ko |
dc.contributor.author | Cho, Gyu-Hyeong | ko |
dc.contributor.author | Kim, Hyun-Sik | ko |
dc.date.accessioned | 2022-11-17T06:02:35Z | - |
dc.date.available | 2022-11-17T06:02:35Z | - |
dc.date.created | 2022-09-27 | - |
dc.date.created | 2022-09-27 | - |
dc.date.issued | 2022-02 | - |
dc.identifier.citation | 2022 IEEE International Solid-State Circuits Conference, ISSCC 2022, pp.474 - 476 | - |
dc.identifier.issn | 0193-6530 | - |
dc.identifier.uri | http://hdl.handle.net/10203/299802 | - |
dc.description.abstract | Triboelectric nanogenerators (TENGs) for collecting ambient mechanical vibration energy have gained popularity as a next-generation energy source owing to their numerous advantages including flexibility, high conversion efficiency, and low cost. However, ultra-high instantaneous open-circuit voltage (110V) is the fundamental feature of TENGs, and thus they are not very compatible with integrated circuits. Recent TENG-harvesting chips [1]-[3] fabricated in a high-voltage BCD have been reported to be capable of handling up to 70V. Considering TENG's nature of producing a very low alternating current (I_T) of several A, the constrained tolerable voltage of the energy-harvesting (EH) interface ICs significantly limits the maximum extractable power to a sub-mW scale. Additionally, it is necessary to reduce the energy wasted to charge and discharge the parasitic capacitance (C_T) of TENG whenever the polarity of I_T changes. To resolve this, several attempts [3], [4] have been made to apply parallel-synchronized switch harvesting on inductor (P-SSHI) of [5] into TENG-EH circuits. However, the conventional P-SSHI with a bias-flip rectifier can still be valid only within a limited voltage range that a single chip can accommodate. | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | A 130V Triboelectric Energy-Harvesting Interface in .18m BCD with Scalable Multi-Chip-Stacked Bias-Flip and Daisy-Chained Synchronous Signaling Technique | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-85128286976 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 474 | - |
dc.citation.endingpage | 476 | - |
dc.citation.publicationname | 2022 IEEE International Solid-State Circuits Conference, ISSCC 2022 | - |
dc.identifier.conferencecountry | US | - |
dc.identifier.conferencelocation | San Francisco | - |
dc.identifier.doi | 10.1109/ISSCC42614.2022.9731605 | - |
dc.contributor.localauthor | Cho, Gyu-Hyeong | - |
dc.contributor.localauthor | Kim, Hyun-Sik | - |
dc.contributor.nonIdAuthor | Kang, Gyeong-Gu | - |
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