785-nm Frequency Comb-Based Time-of-Flight Detection for 3D Surface Profilometry of Silicon Devices

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Three-dimensional integrated circuits (3D-ICs) are becoming more significant in portable devices, autonomous vehicles, and data centers. As the demand for highly integrated and high-performance semiconductor devices grows, recent 3D integration technologies focus on lowering the size of the micro-structures on such devices for high density. In order to inspect the 3D semiconductor devices, it is critical to measure the heights, depths, and overall surface profiles of the micro-structures made with silicon materials. Here, we demonstrate precise surface imaging for silicon devices by using a femtosecond mode-locked laser centered at 785 nm wavelength and an electro-optic sampling-based time-of-flight detection method with sub-10-nanometer axial precision. We could successfully measure the surface profiles as well as the step heights of silicon wafer stacks and micro-scale structures on silicon substrates.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2022-10
Language
English
Article Type
Article
Citation

IEEE PHOTONICS JOURNAL, v.14, no.5

ISSN
1943-0655
DOI
10.1109/JPHOT.2022.3203988
URI
http://hdl.handle.net/10203/298691
Appears in Collection
ME-Journal Papers(저널논문)
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