Low-Temperature Deuterium Annealing to Improve Performance and Reliability in a MOSFET

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Low-temperature deuterium (D2) annealing (LTDA) is applied to improve performances and reliability of a MOSFET. The LTDA is performed at 300 °C, which is at least 100 °C lower than the widely used temperature of forming gas annealing (FGA) with H2, which contributes to reducing a thermal budget especially in the backend-of-the-line (BEOL). DC performances, such as subthreshold slope (SS), threshold voltage (VTH), and on-current (ION) were statistically compared in cases with and without the LTDA to evaluate their improvements. Profiling of D2 by secondary ion mass spectrometry (SIMS) supports that D2 can permeate a gate oxide and passivate dangling bonds and traps near the interface of the SiO2-Si channel. Therefore ION, SS, and VTH were improved, gate leakage current (IG) was reduced, and immunity to positive bias stress (PBS) became better.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
2022-11
Language
English
Article Type
Article
Citation

SOLID-STATE ELECTRONICS, v.197

ISSN
0038-1101
DOI
10.1016/j.sse.2022.108421
URI
http://hdl.handle.net/10203/298017
Appears in Collection
EE-Journal Papers(저널논문)
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