DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Yun-Ho | ko |
dc.contributor.author | Lee, Sangbong | ko |
dc.contributor.author | Choi, Youngwoo | ko |
dc.contributor.author | Seong, Won Kyung | ko |
dc.contributor.author | Han, Kyu Hyo | ko |
dc.contributor.author | Kim, Jang Hwan | ko |
dc.contributor.author | Kim, Hyun-Mi | ko |
dc.contributor.author | Hong, Seungbum | ko |
dc.contributor.author | Lee, Sun Hwa | ko |
dc.contributor.author | Ruoff, Rodney S. | ko |
dc.contributor.author | Kim, Ki-Bum | ko |
dc.contributor.author | Kim, Sang Ouk | ko |
dc.date.accessioned | 2022-04-22T01:00:33Z | - |
dc.date.available | 2022-04-22T01:00:33Z | - |
dc.date.created | 2022-03-10 | - |
dc.date.created | 2022-03-10 | - |
dc.date.created | 2022-03-10 | - |
dc.date.issued | 2022-04 | - |
dc.identifier.citation | ADVANCED MATERIALS, v.34, no.15 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | http://hdl.handle.net/10203/295835 | - |
dc.description.abstract | A reliable method for preparing a conformal amorphous carbon (a-C) layer with a thickness of 1-nm-level, is tested as a possible Cu diffusion barrier layer for next-generation ultrahigh-density semiconductor device miniaturization. A polystyrene brush of uniform thickness is grafted onto 4-inch SiO2/Si wafer substrates with "self-limiting" chemistry favoring such a uniform layer. UV crosslinking and subsequent carbonization transforms this polymer film into an ultrathin a-C layer without pinholes or hillocks. The uniform coating of nonplanar regions or surfaces is also possible. The Cu diffusion "blocking ability" is evaluated by time-dependent dielectric breakdown (TDDB) tests using a metal-oxide-semiconductor (MOS) capacitor structure. A 0.82 nm-thick a-C barrier gives TDDB lifetimes 3.3x longer than that obtained using the conventional 1.0 nm-thick TaNx diffusion barrier. In addition, this exceptionally uniform ultrathin polymer and a-C film layers hold promise for selective ion permeable membranes, electrically and thermally insulating films in electronics, slits of angstrom-scale thickness, and, when appropriately functionalized, as a robust ultrathin coating with many other potential applications. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Large-Area Uniform 1-nm-Level Amorphous Carbon Layers from 3D Conformal Polymer Brushes. A "Next-Generation" Cu Diffusion Barrier? | - |
dc.type | Article | - |
dc.identifier.wosid | 000760899100001 | - |
dc.identifier.scopusid | 2-s2.0-85125242588 | - |
dc.type.rims | ART | - |
dc.citation.volume | 34 | - |
dc.citation.issue | 15 | - |
dc.citation.publicationname | ADVANCED MATERIALS | - |
dc.identifier.doi | 10.1002/adma.202110454 | - |
dc.contributor.localauthor | Hong, Seungbum | - |
dc.contributor.localauthor | Kim, Sang Ouk | - |
dc.contributor.nonIdAuthor | Lee, Sangbong | - |
dc.contributor.nonIdAuthor | Seong, Won Kyung | - |
dc.contributor.nonIdAuthor | Kim, Hyun-Mi | - |
dc.contributor.nonIdAuthor | Lee, Sun Hwa | - |
dc.contributor.nonIdAuthor | Ruoff, Rodney S. | - |
dc.contributor.nonIdAuthor | Kim, Ki-Bum | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | amorphous carbon | - |
dc.subject.keywordAuthor | carbonization | - |
dc.subject.keywordAuthor | Cu diffusion barrier | - |
dc.subject.keywordAuthor | polymer grafting | - |
dc.subject.keywordPlus | DEPENDENT DIELECTRIC-BREAKDOWN | - |
dc.subject.keywordPlus | DIRECT CARBONIZATION | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | TAN | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | MECHANISM | - |
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