Development of high-k organic-inorganic hybrid gate dielectrics for flexible electronics via chemical vapor phase synthesis화학적 기상 합성법을 이용한 유연 전자 소자용 고유전율 유-무기 하이브리드 게이트 절연막 개발

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The high performance, low-power operation of flexible electronics are desirable in the arrival of the wearable era with internet of things (IoT). High-k flexible dielectrics are key element indispensable to the success of future electronics to achieve the requirements. In this dissertation, organic-inorganic hybrid films are proposed as high-k gate dielectrics to achieve both outstanding flexibility of organics and perfect insulating properties of inorganic components. To meet requirements, initiated chemical vapor deposition (iCVD) process is introduced and modified to synthesize the high-k hybrid dielectrics. The new geometry of iCVD chamber is also designed to enable homogeneous, conformal, uniform deposition of ultra-thin hybrid films over large-area, adapting dual shower head structure injection system. The inorganic components in hybrid dielectrics are linearly controlled by adjusting process parameters, exhibiting dielectric constant values of 13.0 and low leakage currents below 1.0 × 10-6 A/cm^2 at 2 MV/cm, with electrical breakdown fields over 3 MV/cm. The hybrid dielectrics are implemented both in the n-type and p-type organic thin film transistors (OTFTs), exhibiting ideal transfer and output characteristics even under tensile strain condition (2 %), regardless of the different hybrid dielectrics. Going further from switching devices, high-performance flexible memory is also required in realizing of wearable electronics. The resistive random access memory (ReRAM) of 2-terminal device is implemented by ultra-thin hybrid dielectrics, having both electro-chemical mechanism (ECM) of metal ion diffusion and valence-change mechanism (VCM) of oxygen vacancy moving. The hybrid ReRAM with hetero-mechanism exhibits outstanding programming/erasing (PRG/ERS) on/off ratio (> 104), endurance (> 105) and retention (~ 108) behaviors. Based on these properties, multi-layer hybrid ReRAM is fabricated to realize multi-bit operation, which is a highly wishful alternate memory device. Furthermore, the new charge trapping (CT) organic non-volatile memory (ONVM) of 3-terminal devices are developed with ultra-thin hybrid dielectrics. The new CT-ONVM devices exhibit large PRG/ERS memory windows (6.8 V), high repeatable endurance (> 104) and good retention characteristics (71% at 108 s). The memory performance of the new CT-ONVM is comparable to that of conventional inorganic silicon-oxide-nitride-oxide-polysilicon (SONOS) devices. These developments high-k hybrid dielectrics, from process and material to memory device, can push forward the performance breakthrough of the flexible and wearable devices.
Advisors
Cho, Byung-Jinresearcher조병진researcher
Description
한국과학기술원 :전기및전자공학부,
Publisher
한국과학기술원
Issue Date
2021
Identifier
325007
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 전기및전자공학부, 2021.2,[xii, 111 p. :]

Keywords

initiated chemical vapor deposition (iCVD)▼aflexible electronics▼aorganic-inorganic hybrid dielectric▼aresistive random access memory (ReRAM)▼acharge trapping organic non-volatile memory (CR-ONVM); 개시제를 이용한 화학 기상 증착▼a유연 전자 소자▼a유-무기 하이브리드 절연막▼a저항변화형 비휘발성 메모리▼a전하포획형 비휘발성 메모리

URI
http://hdl.handle.net/10203/295698
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=956654&flag=dissertation
Appears in Collection
EE-Theses_Ph.D.(박사논문)
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