Studies on formation of long-wavelength visible light emitting InGaN quantum dots using triangular pyramidal structures삼각 피라미드 구조를 이용한 장파장 가시광 발광 InGaN 양자점 형성에 대한 연구

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For the few last decades, semiconductor quantum dots (QDs) are emerging as an ideal candidate for single photon source (SPS) which play a key role in quantum technology, due to their unique optical and material properties. Depending on alloy composition, Ⅲ-nitride semiconductor’s emitting wavelength show a wide spectrum from UV to near IR. In this thesis, we tried to developed the InGaN/GaN pyramidal QDs as a deterministic, site-controlled SPS with long visible wavelength for wireless quantum communication application. Three different growth tactics like epitaxial lateral overgrowth (ELOG) of GaN core, InGaN interlayer and volcano structures are designed. We produced InGaN/GaN pyramidal QDs with 518 nm peak, FWHM of 0.83meV and 65.7% of degree of linear polarization.
Advisors
Cho, Yong-Hoonresearcher조용훈researcher
Description
한국과학기술원 :물리학과,
Publisher
한국과학기술원
Issue Date
2021
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 물리학과, 2021.8,[iv, 36 p. :]

Keywords

InGaN/GaN pyramidal quantum dots▼aepitaxial lateral overgrowth▼avolcano structure▼a, InGaN interlayer▼asingle photon source▼awireless quantum communication; 질화물 피라미드 양자점▼a가로방향 결정성장▼a분화구 구조▼aInGaN 중간층▼a단광자 광원▼a무선양자통신

URI
http://hdl.handle.net/10203/295127
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=963737&flag=dissertation
Appears in Collection
PH-Theses_Master(석사논문)
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