Channel Mobility Boosting in a Poly-Si Channel Using Ge Diffusion Engineering and Hydrogen Plasma Treatment

Cited 1 time in webofscience Cited 0 time in scopus
  • Hit : 451
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorLee, Tae Inko
dc.contributor.authorKim, Min Juko
dc.contributor.authorShin, Eui Joongko
dc.contributor.authorLee, Gyusoupko
dc.contributor.authorJeong, Jaejoongko
dc.contributor.authorLee, Yun Heeko
dc.contributor.authorLee, Jung Hoonko
dc.contributor.authorLee, Jaedukko
dc.contributor.authorCho, Byung-Jinko
dc.date.accessioned2022-04-14T06:49:57Z-
dc.date.available2022-04-14T06:49:57Z-
dc.date.created2022-01-03-
dc.date.created2022-01-03-
dc.date.created2022-01-03-
dc.date.created2022-01-03-
dc.date.created2022-01-03-
dc.date.issued2022-03-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.43, no.3, pp.342 - 345-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/292803-
dc.description.abstractWe demonstrated that channel mobility and cell current could be increased through Ge diffusion engineering and H-2 plasma treatment in a poly-Si channel. Even though the Ge channel has a higher intrinsic mobility than the Si channel, a typical poly-SiGe channel has inferior channel characteristics due to high interface trap density (D-it) and bulk trap density caused by Ge. We propose a novel technique to control the Ge profile along the depth direction of the channel to realize lower Ge concentration at the gate dielectric interface and higher Ge concentration at the channel bulk. This Ge profile could achieve reduced D-it and enhanced channel mobility. Furthermore, the bulk traps caused by Ge are effectively reduced by H-2 plasma treatment. These techniques increased the channel mobility to 32%, which can help increase the channel mobility of devices where poly-Si channels are used.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleChannel Mobility Boosting in a Poly-Si Channel Using Ge Diffusion Engineering and Hydrogen Plasma Treatment-
dc.typeArticle-
dc.identifier.wosid000761656500005-
dc.identifier.scopusid2-s2.0-85122582645-
dc.type.rimsART-
dc.citation.volume43-
dc.citation.issue3-
dc.citation.beginningpage342-
dc.citation.endingpage345-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2022.3140471-
dc.contributor.localauthorCho, Byung-Jin-
dc.contributor.nonIdAuthorLee, Tae In-
dc.contributor.nonIdAuthorKim, Min Ju-
dc.contributor.nonIdAuthorShin, Eui Joong-
dc.contributor.nonIdAuthorLee, Gyusoup-
dc.contributor.nonIdAuthorJeong, Jaejoong-
dc.contributor.nonIdAuthorLee, Yun Hee-
dc.contributor.nonIdAuthorLee, Jung Hoon-
dc.contributor.nonIdAuthorLee, Jaeduk-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorGermaniumAnnealingPlasmasSiliconLogic gatesPerformance evaluationMOSFETPoly-sichannel mobilitytrap densitygermaniumflash memoryH-2 plasma treatment-
dc.subject.keywordPlusACTIVATION-ENERGYFILMDENSITY-
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 1 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0