Curing of 1-Transistor-DRAM by Joule Heat From Punch-Through Current

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The 1-transistor-DRAM (1T-DRAM) with a floating body is iteratively operated and deteriorated as the number of programming cycles is increased. This aging results an increase in the interface trap density ( Nit) . Internal electro-thermal annealing (ETA) using Joule heat generated by punch-through current flowing from the source via the channel to the drain, reduces the Nit and eventually cures the operating damage of the 1T-DRAM. To quantitatively analyze the Nit before and after curing, a synchronized optical charge pumping (SOCP) method that is applicable even to a floating body (FB) device, was used. By adopting self-curing during 1T-DRAM operations, endurance was notably increased by reducing Nit . It is expected that aged 1T-DRAMs can be recovered when such ETA is enabled at the moment of system rebooting.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2022-03
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.43, no.3, pp.370 - 373

ISSN
0741-3106
DOI
10.1109/LED.2022.3147259
URI
http://hdl.handle.net/10203/292777
Appears in Collection
EE-Journal Papers(저널논문)
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