DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Soungmin | ko |
dc.contributor.author | Kang, Yoon-Gu | ko |
dc.contributor.author | Ichihashi, Kodai | ko |
dc.contributor.author | Khazaei, Mohammad | ko |
dc.contributor.author | Swamy, Varghese | ko |
dc.contributor.author | Han, Myung Joon | ko |
dc.contributor.author | Chang, Kee Joo | ko |
dc.contributor.author | Shudo, Ken-ichi | ko |
dc.contributor.author | Raebiger, Hannes | ko |
dc.date.accessioned | 2022-02-18T06:42:26Z | - |
dc.date.available | 2022-02-18T06:42:26Z | - |
dc.date.created | 2022-02-06 | - |
dc.date.created | 2022-02-06 | - |
dc.date.created | 2022-02-06 | - |
dc.date.created | 2022-02-06 | - |
dc.date.issued | 2021-11 | - |
dc.identifier.citation | ACS APPLIED ELECTRONIC MATERIALS, v.3, no.12, pp.5257 - 5264 | - |
dc.identifier.issn | 2637-6113 | - |
dc.identifier.uri | http://hdl.handle.net/10203/292286 | - |
dc.description.abstract | The gallium nitride haeckelite (4|8-GaN) phase is an attractive material for a two-dimensional (2D) light-emitting diode (LED); however, its p-type doping is still challenging due to hole carrier trapping. Our density functional theory calculations suggest strain engineering as a route to release trapped hole carriers. We show that Mg and Be impurities in 4|8-GaN have multifarious hole states, including symmetry-broken polaronic (trapped) and delocalized (extended) states, whose detrapping energies are estimated to be 33.4 and 263.3 meV for Mg and Be impurities, respectively. The hole states trapped by a Mg impurity can be, however, detrapped by applying a moderate tensile strain around 2% perpendicular to the 4|8 plane, which would critically enhance p-type dopability. We further show that the photoluminescence (PL) spectrum of a Mg impurity can be tuned by the lattice strain, which enables efficient control for light emission of 4|8-GaN. Our findings pave the way to design an atomically thin blue LED based on 4|8-GaN. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Strain Engineering to Release Trapped Hole Carriers in p-Type Haeckelite GaN | - |
dc.type | Article | - |
dc.identifier.wosid | 000756999800009 | - |
dc.identifier.scopusid | 2-s2.0-85120337555 | - |
dc.type.rims | ART | - |
dc.citation.volume | 3 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 5257 | - |
dc.citation.endingpage | 5264 | - |
dc.citation.publicationname | ACS APPLIED ELECTRONIC MATERIALS | - |
dc.identifier.doi | 10.1021/acsaelm.1c00765 | - |
dc.contributor.localauthor | Han, Myung Joon | - |
dc.contributor.localauthor | Chang, Kee Joo | - |
dc.contributor.nonIdAuthor | Bae, Soungmin | - |
dc.contributor.nonIdAuthor | Ichihashi, Kodai | - |
dc.contributor.nonIdAuthor | Khazaei, Mohammad | - |
dc.contributor.nonIdAuthor | Swamy, Varghese | - |
dc.contributor.nonIdAuthor | Shudo, Ken-ichi | - |
dc.contributor.nonIdAuthor | Raebiger, Hannes | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | gallium nitridep-type dopingstrain controllight-emitting diodeab initio calculation | - |
dc.subject.keywordPlus | INITIO MOLECULAR-DYNAMICSTOTAL-ENERGY CALCULATIONSLIGHT-EMITTING-DIODESMACROSCOPIC POLARIZATIONNANOWIRESCONSTANTSDEFECTSEPITAXY | - |
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