Ultra-fast Data Sanitization of SRAM by Back-biasing to Resist a Cold Boot Attack

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Although SRAM is a well established type of volatile memory, data remanence has been observed at low temperature even for a power-off state, and thus it is vulnerable to a physical cold boot attack. To address this, an ultra-fast data sanitization method within 5 ns is demonstrated with physics-based simulations for avoidance of the cold boot attack to SRAM. Back-bias, which can control device parameters of CMOS, such as threshold voltage and leakage current, was utilized for the ultra-fast data sanitization. It is applicable to temporary erasing with data recoverability against a low-level attack as well as permanent erasing with data irrecoverability against a high-level attack.
Publisher
NATURE RESEARCH
Issue Date
2022-01
Language
English
Article Type
Article
Citation

SCIENTIFIC REPORTS, v.12, no.1

ISSN
2045-2322
DOI
10.1038/s41598-021-03994-2
URI
http://hdl.handle.net/10203/292158
Appears in Collection
EE-Journal Papers(저널논문)
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