Heterogeneously integrated photonic circuit and method for manufacturing the circuit미세기포 위치 제어 기술을 이용한 화합물반도체와 실리콘 포토닉스 플랫폼의 광집적회로

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dc.contributor.authorYu, Kyoungsikko
dc.contributor.authorJung, Younghoko
dc.date.accessioned2022-01-25T06:41:21Z-
dc.date.available2022-01-25T06:41:21Z-
dc.identifier.urihttp://hdl.handle.net/10203/292031-
dc.description.abstractThe method for manufacturing the heterojunction circuit according to one embodiment of the present disclosure comprises depositing a first electrode on at least a part of a waveguide, moving a semiconductor comprising a second electrode at a lower end thereof onto the first electrode, and depositing a third electrode on an upper end of the semiconductor, wherein the waveguide and the semiconductor comprise different materials. Additionally, the moving step further comprises generating microbubbles by supplying heat to at least a part of the semiconductor, moving the semiconductor on the first electrode by moving the generated microbubbles, and removing the microbubbles by positioning the semiconductor on the first electrode.-
dc.titleHeterogeneously integrated photonic circuit and method for manufacturing the circuit-
dc.title.alternative미세기포 위치 제어 기술을 이용한 화합물반도체와 실리콘 포토닉스 플랫폼의 광집적회로-
dc.typePatent-
dc.type.rimsPAT-
dc.contributor.localauthorYu, Kyoungsik-
dc.contributor.nonIdAuthorJung, Youngho-
dc.contributor.assigneeKAIST-
dc.identifier.iprsType특허-
dc.identifier.patentApplicationNumber16984808-
dc.identifier.patentRegistrationNumber11169327-
dc.date.application2020-08-04-
dc.date.registration2021-11-09-
dc.publisher.countryUS-
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EE-Patent(특허)
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