Semiconductor device and semiconductor logic device반도체 소자 및 반도체 로직 소자

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The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.
Assignee
KAIST
Country
US (United States)
Application Date
2020-11-06
Application Number
17091103
Registration Date
2021-12-21
Registration Number
11205466
URI
http://hdl.handle.net/10203/292030
Appears in Collection
MS-Patent(특허)
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