Double-Gate and Body-Contacted Nonvolatile Oxide Memory Thin-Film Transistors for Fast Erase Programming

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dc.contributor.authorYang, Jong-Heonko
dc.contributor.authorByun, Chun-Wonko
dc.contributor.authorPi, Jae-Eunko
dc.contributor.authorKim, Hee-Okko
dc.contributor.authorHwang, Chi-Sunko
dc.contributor.authorYoo, Seunghyupko
dc.date.accessioned2022-01-14T06:40:31Z-
dc.date.available2022-01-14T06:40:31Z-
dc.date.created2021-12-20-
dc.date.created2021-12-20-
dc.date.issued2022-01-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.120 - 126-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/291787-
dc.description.abstractIn this study, we present programming speed enhancement in amorphous oxide semiconductor memory thin-film transistor (TFT). We developed a nonvolatile memory transistor based on InZnSnO back-channel-etch TFT with InGaZnO charge storage layer inserted between gate insulators. We proposed double-gate (DG) and body-contacted (BC) memory structure to improve memory erase speed, which is the most important issue in oxide memory TFTs. DG memory did not show sufficient improvement due to large voltage drop in second gate insulator. BC memory, which can control back-channel potential directly, showed significant improvement on memory program/erase speed.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleDouble-Gate and Body-Contacted Nonvolatile Oxide Memory Thin-Film Transistors for Fast Erase Programming-
dc.typeArticle-
dc.identifier.wosid000727917800004-
dc.identifier.scopusid2-s2.0-85120850212-
dc.type.rimsART-
dc.citation.volume69-
dc.citation.issue1-
dc.citation.beginningpage120-
dc.citation.endingpage126-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2021.3130011-
dc.contributor.localauthorYoo, Seunghyup-
dc.contributor.nonIdAuthorYang, Jong-Heon-
dc.contributor.nonIdAuthorByun, Chun-Won-
dc.contributor.nonIdAuthorPi, Jae-Eun-
dc.contributor.nonIdAuthorKim, Hee-Ok-
dc.contributor.nonIdAuthorHwang, Chi-Sun-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorThin film transistors-
dc.subject.keywordAuthorLogic gates-
dc.subject.keywordAuthorInsulators-
dc.subject.keywordAuthorNonvolatile memory-
dc.subject.keywordAuthorTransistors-
dc.subject.keywordAuthorProgramming-
dc.subject.keywordAuthorElectrodes-
dc.subject.keywordAuthorInGaZnO-
dc.subject.keywordAuthorInZnSnO-
dc.subject.keywordAuthornonvolatile memory (NVM)-
dc.subject.keywordAuthorthin-film transistor (TFT)-
dc.subject.keywordPlusCHANNEL-
dc.subject.keywordPlusDEVICE-
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