Double-Gate and Body-Contacted Nonvolatile Oxide Memory Thin-Film Transistors for Fast Erase Programming

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In this study, we present programming speed enhancement in amorphous oxide semiconductor memory thin-film transistor (TFT). We developed a nonvolatile memory transistor based on InZnSnO back-channel-etch TFT with InGaZnO charge storage layer inserted between gate insulators. We proposed double-gate (DG) and body-contacted (BC) memory structure to improve memory erase speed, which is the most important issue in oxide memory TFTs. DG memory did not show sufficient improvement due to large voltage drop in second gate insulator. BC memory, which can control back-channel potential directly, showed significant improvement on memory program/erase speed.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2022-01
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.120 - 126

ISSN
0018-9383
DOI
10.1109/TED.2021.3130011
URI
http://hdl.handle.net/10203/291787
Appears in Collection
EE-Journal Papers(저널논문)
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