Robust Quantum Oscillation of Dirac Fermions in a Single-Defect Resonant Transistor

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 45
  • Download : 0
The massless nature of Dirac Fermions produces large energy gaps between Landau levels (LLs), which is promising for topological devices. While the energy gap between the zeroth and first LLs reaches 36 meV in a magnetic field of 1 T in graphene, exploiting the quantum Hall effect at room temperature requires large magnetic fields (∼30 T) to overcome the energy level broadening induced by charge inhomogeneities in the device. Here, we report a way to use the robust quantum oscillations of Dirac Fermions in a single-defect resonant transistor, which is based on local tunneling through a thin (∼1.4 nm) hexagonal boron nitride (h-BN) between lattice-orientation-aligned graphene layers. A single point defect in the h-BN, selected by the orientation-tuned graphene layers, probes local LLs in its proximity, minimizing the energy broadening of the LLs by charge inhomogeneity at a moderate magnetic field and ambient conditions. Thus, the resonant tunneling between lattice-orientation-aligned graphene layers highlights the potential to spectroscopically locate the atomic defects in the h-BN, which contributes to the study on electrically tunable single photon source via defect states in h-BN.
Publisher
AMER CHEMICAL SOC
Issue Date
2021-11
Language
English
Article Type
Article
Citation

ACS NANO, v.15, no.12, pp.20013 - 20019

ISSN
1936-0851
DOI
10.1021/acsnano.1c07613
URI
http://hdl.handle.net/10203/291446
Appears in Collection
PH-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0