Large-Area MoS2 via Colloidal Nanosheet Ink for Integrated Memtransistor

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2D transition metal dichalcogenides (TMDs) exhibit intriguing properties for applications in optoelectronics and electronics, among which memtransistors received extensive attention as multifunctional devices. For practical applications of 2D TMDs, large-area fabrication of the materials via reliable processes, which is in trade-off with their quality, has been a long-standing issue. Here, a simple and effective way is proposed to fabricate large-area and high-quality molybdenum disulfide thin films using MoS2 colloidal ink through a spray coating, followed by a postsulfurization process. High-quality MoS2 thin films exhibit excellent optical and electrical properties that can be utilized in field-effect transistors (FETs) and memtransistor arrays. The MoS2 FETs show an average on/off ratio of 5 x 10(6) and a high electron mobility of 10.34 cm(2) V-1 s(-1), which can be understood by the healing of sulfur vacancies, recrystallization, and the removal of the carbon contamination of the MoS2. These MoS2-based memtransistors present stable operations with a high switching ratio tuned by back gate and light illumination, which is promising for multiple-levels memory and complex neuromorphic computing. This study demonstrates a new strategy to fabricate 2D TMDs with large-area and high quality for integrated optoelectronic and memory device applications.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2021-11
Language
English
Article Type
Article
Citation

SMALL METHODS, v.5, no.11, pp.2100558

ISSN
2366-9608
DOI
10.1002/smtd.202100558
URI
http://hdl.handle.net/10203/289202
Appears in Collection
PH-Journal Papers(저널논문)
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