DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, Ji-Eun | ko |
dc.contributor.author | Lee, Yonghwan | ko |
dc.contributor.author | Mo, Sung-In | ko |
dc.contributor.author | Jeong, Hye-Seong | ko |
dc.contributor.author | An, Jeong-Ho | ko |
dc.contributor.author | Song, Hee-eun | ko |
dc.contributor.author | Oh, Jihun | ko |
dc.contributor.author | Bang, Junhyeok | ko |
dc.contributor.author | Oh, Joon-Ho | ko |
dc.contributor.author | Kim, Ka-Hyun | ko |
dc.date.accessioned | 2021-11-03T06:42:51Z | - |
dc.date.available | 2021-11-03T06:42:51Z | - |
dc.date.created | 2021-09-14 | - |
dc.date.created | 2021-09-14 | - |
dc.date.created | 2021-09-14 | - |
dc.date.issued | 2021-10 | - |
dc.identifier.citation | ADVANCED MATERIALS, v.33, no.41, pp.2103708 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | http://hdl.handle.net/10203/288608 | - |
dc.description.abstract | The fabrication of ultrathin silicon wafers at low cost is crucial for advancing silicon electronics toward stretchability and flexibility. However, conventional fabrication techniques are inefficient because they sacrifice a large amount of substrate material. Thus, advanced silicon electronics that have been realized in laboratories cannot move forward to commercialization. Here, a fully bottom-up technique for producing a self-releasing ultrathin silicon wafer without sacrificing any of the substrate is presented. The key to this approach is a self-organized nanogap on the substrate fabricated by plasma-assisted epitaxial growth (plasma-epi) and subsequent hydrogen annealing. The wafer thickness can be independently controlled during the bulk growth after the formation of plasma-epi seed layer. In addition, semiconductor devices are realized using the ultrathin silicon wafer. Given the high scalability of plasma-epi and its compatibility with conventional semiconductor process, the proposed bottom-up wafer fabrication process will open a new route to developing advanced silicon electronics. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Fully Bottom-Up Waste-Free Growth of Ultrathin Silicon Wafer via Self-Releasing Seed Layer | - |
dc.type | Article | - |
dc.identifier.wosid | 000692067100001 | - |
dc.identifier.scopusid | 2-s2.0-85114112119 | - |
dc.type.rims | ART | - |
dc.citation.volume | 33 | - |
dc.citation.issue | 41 | - |
dc.citation.beginningpage | 2103708 | - |
dc.citation.publicationname | ADVANCED MATERIALS | - |
dc.identifier.doi | 10.1002/adma.202103708 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Oh, Jihun | - |
dc.contributor.nonIdAuthor | Hong, Ji-Eun | - |
dc.contributor.nonIdAuthor | Mo, Sung-In | - |
dc.contributor.nonIdAuthor | Jeong, Hye-Seong | - |
dc.contributor.nonIdAuthor | An, Jeong-Ho | - |
dc.contributor.nonIdAuthor | Song, Hee-eun | - |
dc.contributor.nonIdAuthor | Bang, Junhyeok | - |
dc.contributor.nonIdAuthor | Oh, Joon-Ho | - |
dc.contributor.nonIdAuthor | Kim, Ka-Hyun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | epitaxial Si | - |
dc.subject.keywordAuthor | kerfless wafer fabrication | - |
dc.subject.keywordAuthor | self-releasing layer | - |
dc.subject.keywordAuthor | single-batch reactor | - |
dc.subject.keywordAuthor | ultrathin Si | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | DEGREES-C | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | VOIDS | - |
dc.subject.keywordPlus | FILMS | - |
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