Temperature dependence of intrinsic and extrinsic contributions to anisotropic magnetoresistance

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Electrical conduction in magnetic materials depends on their magnetization configuration, resulting in various magnetoresistances (MRs). The microscopic mechanisms of MR have so far been attributed to either an intrinsic or extrinsic origin, yet the contribution and temperature dependence of either origin has remained elusive due to experimental limitations. In this study, we independently probed the intrinsic and extrinsic contributions to the anisotropic MR (AMR) of a permalloy film at varying temperatures using temperature-variable terahertz time-domain spectroscopy. The AMR induced by the scattering-independent intrinsic origin was observed to be approximately 1.5% at T = 16 K and is virtually independent of temperature. In contrast, the AMR induced by the scattering-dependent extrinsic contribution was approximately 3% at T = 16 K but decreased to 1.5% at T = 155 K, which is the maximum temperature at which the AMR can be resolved using THz measurements. Our results experimentally quantify the temperature-dependent intrinsic and extrinsic contributions to AMR, which can stimulate further theoretical research to aid the fundamental understanding of AMR.
Publisher
NATURE PORTFOLIO
Issue Date
2021-10
Language
English
Article Type
Article
Citation

SCIENTIFIC REPORTS, v.11, no.1, pp.20884

ISSN
2045-2322
DOI
10.1038/s41598-021-00374-8
URI
http://hdl.handle.net/10203/288604
Appears in Collection
MS-Journal Papers(저널논문)PH-Journal Papers(저널논문)
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