Theory of nonradiative transitions of hot carriers in Si/SiO2 nanocrystals

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Energy relaxation of hot electrons and holes confined in silicon nanocrystals embedded in SiO2 matrix is studied theoretically. Phonon-assisted transitions rates strongly depend on nanocrystal diameter ranging from 108 s-1 to 10-12 s-1. The Auger-like transitions are found to be considerably faster and lead to rapid energy exchange within electron-hole pair.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2011-03
Language
English
Article Type
Article
Citation

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, v.8, no.3, pp.985 - 990

ISSN
1610-1642
DOI
10.1002/pssc.201000407
URI
http://hdl.handle.net/10203/287501
Appears in Collection
PH-Journal Papers(저널논문)
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