Hybrid Gate Dielectric of MoS2 Transistors for Enhanced Photo-Electronic Stability

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dc.contributor.authorPark, Haminko
dc.contributor.authorOh, Dong Sikko
dc.contributor.authorHong, Woonggiko
dc.contributor.authorKang, Juyeonko
dc.contributor.authorLee, Geon-Beomko
dc.contributor.authorShin, Gwang Hyukko
dc.contributor.authorChoi, Yang-Kyuko
dc.contributor.authorIm, Sung Gapko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2021-08-09T07:10:14Z-
dc.date.available2021-08-09T07:10:14Z-
dc.date.created2021-07-13-
dc.date.created2021-07-13-
dc.date.created2021-07-13-
dc.date.issued2021-07-
dc.identifier.citationADVANCED MATERIALS INTERFACES, v.8, no.14, pp.2100599-
dc.identifier.issn2196-7350-
dc.identifier.urihttp://hdl.handle.net/10203/287090-
dc.description.abstractMoS2 thin-film transistors (TFTs) have been widely studied for use as driving TFTs of active-matrix displays considering their outstanding electrical advantages such as high mobility and high on/off current ratio. However, due to the atomically thin nature of MoS2, the device performance of MoS2 TFTs suffers from trap sites at the interface. In this study, a hybrid gate dielectric based on an interface engineering strategy using poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane) (pV3D3) via initiated chemical vapor deposition is investigated to enhance the negative bias illumination stress (NBIS) stability of MoS2 TFTs. Compared to a single oxide dielectric layer (Al2O3), a hybrid dielectric layer (pV3D3/Al2O3) exhibits decreased threshold voltage shift under NBIS by reducing functional groups, such as hydroxyl (OH-) group, which act as charge trapping sites at the interface between the MoS2 channel and the gate dielectric. It is confirmed by quantitative analysis using the stretched-exponential model. Tau (tau), one of the modeling parameters in the stretched-exponential model, decreases from 210 to 120 s, indicating the improvement in stability. Furthermore, in a low-frequency noise (1/f) measurement, hybrid-dielectric-based TFTs show an order of magnitude lower noise power spectral density (S-ID/I-D(2)) than single-oxide-dielectric-based TFTs.-
dc.languageEnglish-
dc.publisherWILEY-
dc.titleHybrid Gate Dielectric of MoS2 Transistors for Enhanced Photo-Electronic Stability-
dc.typeArticle-
dc.identifier.wosid000667136900001-
dc.identifier.scopusid2-s2.0-85108977132-
dc.type.rimsART-
dc.citation.volume8-
dc.citation.issue14-
dc.citation.beginningpage2100599-
dc.citation.publicationnameADVANCED MATERIALS INTERFACES-
dc.identifier.doi10.1002/admi.202100599-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.localauthorIm, Sung Gap-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorPark, Hamin-
dc.contributor.nonIdAuthorOh, Dong Sik-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorhybrid gate dielectric-
dc.subject.keywordAuthorinterface engineering-
dc.subject.keywordAuthorlow-frequency noise-
dc.subject.keywordAuthorMoS-
dc.subject.keywordAuthor(2) transistor-
dc.subject.keywordAuthornegative bias illumination stress-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusLOW-FREQUENCY NOISE-
dc.subject.keywordPlusHEXAGONAL BORON-NITRIDE-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusHIGH-MOBILITY-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusTFTS-
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