Quenching-Resistant Solid-State Photoluminescence of Graphene Quantum Dots: Reduction of pi-pi Stacking by Surface Functionalization with POSS, PEG, and HDA

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dc.contributor.authorPark, Minsuko
dc.contributor.authorJeong, Yanghoko
dc.contributor.authorKim, Hyung Sukko
dc.contributor.authorLee, Woochanko
dc.contributor.authorNam, Sang-Hyeonko
dc.contributor.authorLee, Sukkiko
dc.contributor.authorYoon, Hyewonko
dc.contributor.authorKim, Jinko
dc.contributor.authorYoo, Seunghyupko
dc.contributor.authorJeon, Seokwooko
dc.date.accessioned2021-07-21T04:30:14Z-
dc.date.available2021-07-21T04:30:14Z-
dc.date.created2021-05-25-
dc.date.issued2021-07-
dc.identifier.citationADVANCED FUNCTIONAL MATERIALS, v.31, no.29, pp.2102741-
dc.identifier.issn1616-301X-
dc.identifier.urihttp://hdl.handle.net/10203/286784-
dc.description.abstractGraphene quantum dots (GQDs) have attracted great attention as next-generation luminescent nanomaterials due to the advantages of a low-cost process, low toxicity, and unique photoluminescence (PL). However, in the solid-state, the strong pi-pi stacking interactions between the basal planes of GQDs lead to aggregation-caused PL quenching (ACQ), which impedes practical application to light-emitting devices. Here, surface functionalized GQDs (F-GQDs) by polyhedral oligomeric silsesquioxane (POSS), poly(ethylene glycol) (PEG), and hexadecylamine (HDA) to reduce pi-pi stacking-induced ACQ is presented. The POSS-, PEG-, and HDA-functionalized GQDs show a significant enhancement in PL intensity compared to bare GQDs by 9.5-, 9.0-, and 5.6-fold in spin-coated film form and by 8.3-, 7.2-, and 3.4-fold in drop-casted film form, respectively. Experimental results and molecular dynamics simulations indicate that steric hindrance of the functionalization agent contributes to reducing the pi-pi stacking between adjacent GQDs and thereby enabling quenching-resistant PL in the solid-state. Moreover, the GQD-based white light-emitting diodes fabricated by mounting HDA-GQDs on a UV-LED chip exhibits efficient down-conversion for white light emission with a high color rendering index of 86.2 and a correlated-color temperature of 5612 K at Commission Internationale de l'eclairage coordinates of (0.333, 0.359).-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleQuenching-Resistant Solid-State Photoluminescence of Graphene Quantum Dots: Reduction of pi-pi Stacking by Surface Functionalization with POSS, PEG, and HDA-
dc.typeArticle-
dc.identifier.wosid000647486100001-
dc.identifier.scopusid2-s2.0-85105167897-
dc.type.rimsART-
dc.citation.volume31-
dc.citation.issue29-
dc.citation.beginningpage2102741-
dc.citation.publicationnameADVANCED FUNCTIONAL MATERIALS-
dc.identifier.doi10.1002/adfm.202102741-
dc.contributor.localauthorYoo, Seunghyup-
dc.contributor.localauthorJeon, Seokwoo-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthoraggregation&amp-
dc.subject.keywordAuthor#8208-
dc.subject.keywordAuthorcaused quenching-
dc.subject.keywordAuthorelectroluminescence-
dc.subject.keywordAuthorgraphene quantum dots-
dc.subject.keywordAuthorphotoluminescence-
dc.subject.keywordAuthorsurface functionalization-
dc.subject.keywordPlusLIGHT-EMITTING-DIODES-
dc.subject.keywordPlusMICROFLUIDIC DEVICE-
dc.subject.keywordPlusCOMPOSITE-
dc.subject.keywordPlusEFFICIENT-
dc.subject.keywordPlusEMISSION-
dc.subject.keywordPlusENERGY-
dc.subject.keywordPlusCHEMISTRY-
dc.subject.keywordPlusCARBON-
dc.subject.keywordPlusBLUE-
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