Atomically thin Schottky junction with a gap-mode plasmon for enhanced photoresponsivity in MoS2-based photodetectors

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dc.contributor.authorJin, Hyeok Junko
dc.contributor.authorLee, Khang Juneko
dc.contributor.authorPark, Cheol Minko
dc.contributor.authorShin, Gwang Hyukko
dc.contributor.authorHong, Woonggiko
dc.contributor.authorOh, Dongsikko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2021-07-06T07:10:17Z-
dc.date.available2021-07-06T07:10:17Z-
dc.date.created2021-06-30-
dc.date.issued2021-04-
dc.identifier.citationJOURNAL OF PHYSICS D-APPLIED PHYSICS, v.54, no.14, pp.145301-
dc.identifier.issn0022-3727-
dc.identifier.urihttp://hdl.handle.net/10203/286439-
dc.description.abstractTwo-dimensional (2D) materials present various extraordinary properties that are advantageous in optoelectronic devices with atomically thin nature. Despite their excellent light-matter interaction, a low optical absorption that is proportional to thickness is considered to be a major limitation. In this study, a gap-mode plasmon structure is applied to the Schottky junction of Au-MoS2 to compensate for its low absorption. The magnitude of the gap-mode plasmon is generally known to be inversely proportional to the gap distance between two metal nanostructures; hence, an atomically thin 2D material can be considered to be a good candidate for a gap spacer. Owing to the gap-mode plasmon structure, the photoresponsivity of the proposed device is enhanced by approximately 11.6 times from 25 to 290 A W-1 under 1 nW of laser power, without photoresponse time degradation. Two operation modes, named the photovoltaic and the photoconductive mode, are also observed through different response times; these present different carrier transport mechanisms depending on the existence of bias voltage.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.titleAtomically thin Schottky junction with a gap-mode plasmon for enhanced photoresponsivity in MoS2-based photodetectors-
dc.typeArticle-
dc.identifier.wosid000612930800001-
dc.identifier.scopusid2-s2.0-85100985434-
dc.type.rimsART-
dc.citation.volume54-
dc.citation.issue14-
dc.citation.beginningpage145301-
dc.citation.publicationnameJOURNAL OF PHYSICS D-APPLIED PHYSICS-
dc.identifier.doi10.1088/1361-6463/abd6ac-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorOh, Dongsik-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthoratomically thin Schottky junction-
dc.subject.keywordAuthorgap-mode plasmons-
dc.subject.keywordAuthorMoS2-
dc.subject.keywordAuthorphotodetectors-
dc.subject.keywordAuthorultrahigh photoresponsivity-
dc.subject.keywordPlusMOS2-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusBULK-
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