Classical and quantum phases in hexagonal boron nitride-combined van der Waals heterostructures Classical and quantum phases in hexagonal boron nitride-combined van der Waals heterostructures

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Since the discovery of graphene, two-dimensional (2D) layered materials have attracted extensive attention owing to their unique properties and promising potential applications. In particular, van der Waals (vdW) heterostructures, artificially stacked with 2D materials, have provided an excellent platform to explore various applications and to unveil long-standing mysteries in quantum and condensed matter physics. Here, we discuss recent progress in novel classical and quantum phases in vdW heterostructures, emerging through thickness-dependent hexagonal boron nitride (h-BN) combined with graphene and transitional metal dichalcogenides. As a cornerstone of vdW heterostructures, the h-BN plays diverse roles, such as tunneling barriers, dielectric layers, clean substrates, and capping layers, to realize numerous intriguing devices: field-effect transistors, tunneling light-emitting diodes, resonant tunneling diodes, nonvolatile memories, Bose-Einstein condensation, topological insulators, and graphene-based superconductors. The vdW heterostructures with various roles of h-BN continue to enrich our knowledge for quantum physics and practical future device applications.
Publisher
WILEY
Issue Date
2021-03
Language
English
Article Type
Article
Citation

INFOMAT, v.3, no.3, pp.252 - 270

ISSN
2567-3165
DOI
10.1002/inf2.12121
URI
http://hdl.handle.net/10203/286321
Appears in Collection
PH-Journal Papers(저널논문)
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