DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, YiTaek | ko |
dc.contributor.author | Seok, Yongwook | ko |
dc.contributor.author | Jang, Hanbyeol | ko |
dc.contributor.author | Kumar, Arvind Shankar | ko |
dc.contributor.author | Watanabe, Kenji | ko |
dc.contributor.author | Taniguchi, Takashi | ko |
dc.contributor.author | Gao, Xuan P. A. | ko |
dc.contributor.author | Lee, Kayoung | ko |
dc.date.accessioned | 2021-06-23T02:10:11Z | - |
dc.date.available | 2021-06-23T02:10:11Z | - |
dc.date.created | 2021-06-23 | - |
dc.date.created | 2021-06-23 | - |
dc.date.issued | 2021-01 | - |
dc.identifier.citation | ACS APPLIED ELECTRONIC MATERIALS, v.3, no.1, pp.163 - 169 | - |
dc.identifier.issn | 2637-6113 | - |
dc.identifier.uri | http://hdl.handle.net/10203/286106 | - |
dc.description.abstract | We investigate transport properties and scattering mechanisms of high-mobility InSe nanosheets, encapsulated by hBN, via four-terminal measurements. The measured conductivities increase as temperature (T) decreases, showing a metallic behavior at gate voltages above a threshold voltage, in contrast to the metal-insulator transition occurring at a high gate voltage observed in the two-terminal conductance of InSe. Phonon-limited and impurity-limited mobilities were separated for each carrier density (n) and T. Extracted impurity-limited mobility values are weakly dependent on n due to dominant short-range scatterers, while phonon-limited mobility values decrease as n increases due to second subband occupation and increased electron-phonon scattering. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Multiterminal Transport Measurements of Multilayer InSe Encapsulated by hBN | - |
dc.type | Article | - |
dc.identifier.wosid | 000613935300012 | - |
dc.identifier.scopusid | 2-s2.0-85099023474 | - |
dc.type.rims | ART | - |
dc.citation.volume | 3 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 163 | - |
dc.citation.endingpage | 169 | - |
dc.citation.publicationname | ACS APPLIED ELECTRONIC MATERIALS | - |
dc.identifier.doi | 10.1021/acsaelm.0c00771 | - |
dc.contributor.localauthor | Lee, Kayoung | - |
dc.contributor.nonIdAuthor | Choi, YiTaek | - |
dc.contributor.nonIdAuthor | Seok, Yongwook | - |
dc.contributor.nonIdAuthor | Jang, Hanbyeol | - |
dc.contributor.nonIdAuthor | Kumar, Arvind Shankar | - |
dc.contributor.nonIdAuthor | Watanabe, Kenji | - |
dc.contributor.nonIdAuthor | Taniguchi, Takashi | - |
dc.contributor.nonIdAuthor | Gao, Xuan P. A. | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | indium selenide | - |
dc.subject.keywordAuthor | transport | - |
dc.subject.keywordAuthor | scattering | - |
dc.subject.keywordAuthor | mobility | - |
dc.subject.keywordAuthor | metal-insulator transition | - |
dc.subject.keywordPlus | ELECTRON-MOBILITY | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | CONTACT | - |
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