Vertical InGaAs Biristor for Sub-1 V Operation

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A vertical bi-stable resistor (biristor) composed of In0.53Ga0.47As was demonstrated for sub-1 V operation. An inherent small bandgap and a scaled base length of 150 nm led to the remarkable reduction in latch-up voltage compared to Si(Ge)-based conventional biristors. The epitaxially grown n-p-n structure allowed an abrupt p-n junction, which was also very important to reduce the latch-up voltage. Furthermore, the physical mechanism of carrier transport in the InGaAs biristor was explored with TCAD simulations.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2021-05
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.42, no.5, pp.681 - 683

ISSN
0741-3106
DOI
10.1109/LED.2021.3070334
URI
http://hdl.handle.net/10203/285327
Appears in Collection
EE-Journal Papers(저널논문)
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