Vertical InGaAs Biristor for Sub-1 V Operation

Abstract

A vertical bi-stable resistor (biristor) composed of In0.53Ga0.47As was demonstrated for sub-1 V operation. An inherent small bandgap and a scaled base length of 150 nm led to the remarkable reduction in latch-up voltage compared to Si(Ge)-based conventional biristors. The epitaxially grown n-p-n structure allowed an abrupt p-n junction, which was also very important to reduce the latch-up voltage. Furthermore, the physical mechanism of carrier transport in the InGaAs biristor was explored with TCAD simulations.