Fast Flexible Bottom-Gated Hydrogen Sensor Based on Silicon Nanomembrane

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High performance flexible hydrogen sensor using a silicon nanomembrane (Si NM) coated with palladium nanoparticles (Pd NPs) is developed. After the formation of gate structure on a released Si NM, selectively pre-doped Si NM is flip-transferred onto a plastic substrate. Along with Pd NPs deposited on top of the Si channel, the bottom gate structure allows the sensor to operate in a sub-threshold regime maximizing the response and recovery speed. A device simulation study revealed that the current change caused by shifting the threshold voltage upon H-2 exposure is the main operating mechanism of the sensor. The fabricated sensor shows high response (up to 250% @ 0.7% H-2 concentration), short response time (tau(10-90) = 10 s), and short recovery time (tau(90-10) = 10 s). In addition, the sensor shows low detection limit (50 ppm) and high mechanical robustness.
Publisher
WILEY
Issue Date
2021-05
Language
English
Article Type
Article
Citation

ADVANCED MATERIALS TECHNOLOGIES, v.6, no.5

ISSN
2365-709X
DOI
10.1002/admt.202000847
URI
http://hdl.handle.net/10203/285291
Appears in Collection
ME-Journal Papers(저널논문)
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