Design of 60GHz CMOS power amplifier

Abstract

Operation at a millimeter-wave frequency, where around 7GHz of unlicensed bandwidth is available in the 60GHz band. Wireless communication has experienced rapid development for several decades, and the communication rate has increased from a few kbps to several hundred Mbps, but multimedia services and high-definition video data have placed higher demands on communication rates. Faced with the increasingly tight trend of traditional spectrum resources, 60GHz millimeter-wave communication has become a strong candidate for the next generation of an intentional communication standards in order to meet the needs of the next generation of unlimited communication with up to several Gbps transmission rates. Natural spatial isolation caused by propagation loss due to free space path loss(FSPL) and oxygen absorption makes communication in this frequency band only viable over short ranges (till 10 meters). Also, a receiver with wide channel bandwidth requires more signal-to-noise ratio (SNR). Therefore, need a power amplifier to overcome these degradations. In order to realize 60GHz wireless communication, it is key to develop the chip of radio frequency front end, and the millimeter wave radio frequency front end largely determines the performance, cost, and sized of the system. To achieve commercialization of 60GHz communication systems, low power and low-cost bulk CMOS processes are the preferred solutions. However, there are still many problems to solve in order to implement the 60 GHz RF communication system chip. This thesis has carried out in-depth research on the transmitter part of the 60GHz RF communication system chip