(A) study on highly stable high mobility oxide thin-film transistors with transparency and flexibility for the high-resolution large area next-generation Display

Abstract

Research for the high-end and transparent flexible oxide thin-film transistors (TFTs) have been actively conducted to drive high performance next generation displays capable of delivering higher quality image information in various environments. In this study, highly stable high mobility oxide TFTs were secured by removing defects in the oxide semiconductor by incorporating hydrogen (H) with proper amounts through the oxygen source plasma treatment and the H barriers. In addition, by using an environment-assisted de-bonding phenomenon, we propose the method of realizing flexible and transparent oxide TFTs by applying the molybdenum oxide as the exfoliation layer and delaminate the devices from the rigid substrate with physical force. Since the plastic materials are used after fabrication of the devices, the high-temperature process was possible, and it showed excellent electrical properties even after the devices transferred to the plastic substrate. In addition, the devices demonstrated in this study exhibited good durability in the several bending environments.