(A) study on highly stable high mobility oxide thin-film transistors with transparency and flexibility for the high-resolution large area next-generation Display = 고해상도 대면적 차세대 디스플레이를 위한 고이동도 고안정성 산화물 박막 트랜지스터 및 투명 유연화 연구

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Research for the high-end and transparent flexible oxide thin-film transistors (TFTs) have been actively conducted to drive high performance next generation displays capable of delivering higher quality image information in various environments. In this study, highly stable high mobility oxide TFTs were secured by removing defects in the oxide semiconductor by incorporating hydrogen (H) with proper amounts through the oxygen source plasma treatment and the H barriers. In addition, by using an environment-assisted de-bonding phenomenon, we propose the method of realizing flexible and transparent oxide TFTs by applying the molybdenum oxide as the exfoliation layer and delaminate the devices from the rigid substrate with physical force. Since the plastic materials are used after fabrication of the devices, the high-temperature process was possible, and it showed excellent electrical properties even after the devices transferred to the plastic substrate. In addition, the devices demonstrated in this study exhibited good durability in the several bending environments.
Advisors
Park, Sang-Heeresearcher박상희researcher
Description
한국과학기술원 :신소재공학과,
Publisher
한국과학기술원
Issue Date
2020
Identifier
325007
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 신소재공학과, 2020.8,[ix, 102 p. :]

Keywords

oxide thin-film transistors▼ahydrogen▼ahigh mobility▼astability▼adelamination▼aflexible and transparent device; 산화물 박막 트랜지스터▼a수소▼a고이동도▼a고안정성▼a박리법▼a투명 유연 소자

URI
http://hdl.handle.net/10203/284488
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=926272&flag=dissertation
Appears in Collection
MS-Theses_Ph.D.(박사논문)
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