(A) study on atomic layer deposition-assisted oxide thin film diode and its application to wearable platform = 원자층 증착법을 활용한 산화물 박막 다이오드의 이해 및 웨어러블 플랫폼 응용

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Rectifying diodes have been emerging as one of promising components for advanced functional devices including resistive random access memory and backplanes of active-matrix system. Among various types of diodes, metal-insulator-oxide semiconductor diodes have been extensively studied for their outstanding stability and rectifying characteristics. In this dissertation, we developed an ALD-assisted oxide thin film diode by interface engineering, and obtained high on/off ratio of ~ $10^8$, low off current density of $10^{-9} A/cm^2$ and good reliability. Also, we studied an exact mechanism of current flow through various chemical and electrical analysis. Furthermore, we utilized the diodes to demonstrate an active-matrix platform for a wearable electronic system. Consequently, a wearable active-matrix pressure sensor array based on a contact resistive sensor was successfully developed and characterized.
Advisors
Park, Sang-Heeresearcher박상희researcher
Description
한국과학기술원 :신소재공학과,
Publisher
한국과학기술원
Issue Date
2020
Identifier
325007
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 신소재공학과, 2020.8,[x, 102 p. :]

Keywords

Oxide semiconductor▼aAtomic layer deposition method▼aDiode▼aPressure sensor▼aActive-matrix; wearable device; 산화물 반도체▼a원자층 증착법▼a다이오드▼a압력센서▼a능동형 매트릭스▼a웨어러블 소자

URI
http://hdl.handle.net/10203/284483
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=926267&flag=dissertation
Appears in Collection
MS-Theses_Ph.D.(박사논문)
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