Interfacial defect passivation and improved crystallinity of $Sb_2Se_3$ thin film solar cells = 셀렌화 안티모니 박막 태양전지의 계면 결함 패시베이션과 향상된 결정성에 관한 연구

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Low-toxic and earth-abundant $Sb_2Se_3$ binary compound consists of simple one dimensional crystal structure with suitable absorption coefficients, carrier mobility and bandgap for thin film solar cells, having drastic development of power conversion efficiency (PCE) from 1.9% in 2014 to 9.2% in 2019. At high temperature, $Sb_2Se_3$ decomposes into Se atoms which have high vapor pressure, increasing probability of $V_{Se}$ formation which was reported to have detrimental effect in chalcogenide-based thin films due to lowest defect formation energy. Improved carrier collection was predicted by efficient carrier transport when $Sb_2Se_3$ is aligned into c-axis orientation because electrical property of $Sb_2Se_3$ is strongly determined by crystallinity of unique one-dimensional ribbon structure. In this study, $Sb_2Se_3$ thin film solar cells were fabricated by vapor transport deposition (VTD) which is one of the fast vacuum deposition method. Interfacial defect passivation by oxygen incorporation and the growth as well as crystallinity of $Sb_2Se_3$ with different temperature of substrate and source will be discussed.
Advisors
Shin, Byungharesearcher신병하researcher
Description
한국과학기술원 :신소재공학과,
Publisher
한국과학기술원
Issue Date
2020
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 신소재공학과, 2020.2,[48 p. :]

Keywords

$Sb_2Se_3$▼avapor transport deposition (VTD)▼aoxygen incorporation▼ainterfacial defect passivation▼afilm growth▼acrystallinity; 셀렌화 안티모니▼a기상 증착법▼a산소 혼합▼a계면 결함 패시베이션▼a박막 성장▼a결정성

URI
http://hdl.handle.net/10203/283879
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=909972&flag=dissertation
Appears in Collection
MS-Theses_Master(석사논문)
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