Flexible and transparent thin film transistor based on 2D Materials2차원 소재 기반의 유연한 투명박막 트랜지스터

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Two-dimensional (2D) materials have attracted numerous attention because of their outstanding electrical, mechanical, and optical characteristics. Since all of conducting (graphene), semiconducting (molybdenum disulfide, $MoS_2$), and insulating (hexagonal boron nitride, h-BN) components can consist of 2D materials, thin film transistors (TFTs) based on 2D materials have been developed. However, several unexplored issues have existed such as interlayer interaction and contact resistance. Furthermore, large-scale application is needed exceeding initial implementation with mechanical exfoliation method. In this study, we developed large-scale, flexible, and transparent TFTs based on 2D materials for active-matrix organic light-emitting diode (AMOLED). For the fundamental process techniques, we developed the large-scale synthesis of uniform h-BN films that was performed by plasma-enhanced atomic layer deposition, and the atomic-scale etching of h-BN films that was performed using Ar plasma at room temperature. Moreover, the heterostructures consist of 2D materials were investigated, including a semiconductor/insulator structure and a semiconductor/conductor structure. In the semiconductor/insulator heterostructures formed by $MoS_2/h-BN$, the interlayer coupling, including interfacial impurities, strain, and exciton-phonon coupling, was studied using temperature-dependent Raman scattering and photoluminescence. In the semiconductor/conductor heterostructures formed by $MoS_2/graphene$, the work function tuning of graphene was investigated to lower the Schottky barrier to reduce the contact resistance. Depending on the above studies and large-scale 2D materials, we developed flexible (bending radius<1 mm) and transparent (transmittance>70%) TFTs with high electrical performance (mobility>$10 cm^2V^{-1}s^{-1}$, on/off current ratio>$10^6$). Finally, we demonstrated the AMOLED exhibiting pixel-by-pixel driving with flexible and transparent TFT array based on 2D materials.
Advisors
Choi, Sung-Yoolresearcher최성율researcher
Description
한국과학기술원 :전기및전자공학부,
Publisher
한국과학기술원
Issue Date
2019
Identifier
325007
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 전기및전자공학부, 2019.8,[vi, 102 p. :]

Keywords

2차원 소재▼a이종접합구조▼a박막 트랜지스터▼a유연/투명 소자▼a능동 구동 유기발광다이오드; two-dimensional material▼aheterostructure▼athin film transistor▼aflexible/transparent device▼aactive-matrix organic light-emitting diode

URI
http://hdl.handle.net/10203/283299
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=871474&flag=dissertation
Appears in Collection
EE-Theses_Ph.D.(박사논문)
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