Hot-electron-based photovoltaics has great potential to overcome the limitations of semiconductor-based photovoltaics. However, hot-electron applications still suffer from low quantum efficiency, associated with inefficient hot-electron collection and a poor absorption coefficient. Her; we demonstrate that hot-electron flow on a plasmonic Ag nanodiode is highly enhanced by depositing a MAPbI(3) thin film. Femtosecond transient absorption spectra reveal the hot-electron dynamics, where the hot electrons from MAPbI(3) denote significantly prolonged relaxation time over those from Ag, which can facilitate the internal photoemission process. By comparing the unraveled dynamics of MAPbI(3) on plasmonic Ag to those on a plasmonic Au structure, we found that the former combination exhibits enhanced hot-electron transfer, which is correlated to higher hot-electron flow. We believe that the suggested structure in this work can provide a useful alternative model to design sensitive hot-electron-based photovoltaics.