Passivation layer effect on the positive bias temperature instability of molybdenum disulfide thin film transistors

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As two-dimensional (2D) materials have a large surface to volume ratio, the stability of thin film transistors (TFTs) is likely to be lowered with air exposure. Therefore, we study the positive bias temperature instability (PBTI) of chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) TFTs before and after deposition of a passivation layer. The results of the PBTI study demonstrate that the fabricated devices adjust to the stretched-exponential model, which shows a threshold voltage shift attributed to the charge trapping mechanism. However, by depositing the passivation layer (Al2O3) that physically blocks the charge transfer process with O(2)and H2O adsorbed to the surface of the MoS(2)channel, the threshold voltage shifted reduces from 10 V to 7.4 V under stress condition. The quantitative value of tau (tau), one of the fitting parameters of the stretched-exponential model, also decreases from 6453 s to 5153 s, resulting in improved device stability.
Publisher
TAYLOR & FRANCIS LTD
Issue Date
2021-01
Language
English
Article Type
Article
Citation

JOURNAL OF INFORMATION DISPLAY, v.22, no.1, pp.13 - 19

ISSN
1598-0316
DOI
10.1080/15980316.2020.1776407
URI
http://hdl.handle.net/10203/281256
Appears in Collection
EE-Journal Papers(저널논문)
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