Atomically Thin Heterostructure with Gap-Mode Plasmon for Overcoming Trade-off between Photoresponsivity and Response Time

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 38
  • Download : 0
Two-dimensional (2D) materials have recently provided a new perspective on optoelectronics because of their unique layered structure and excellent physical properties. However, their potential use as optoelectric devices has been limited by the trade-off between photoresponsivity and response time. Here, based on a vertically stacked atomically thin p-n junction, we propose a gap-mode plasmon structure that simultaneously enables enhanced responsivity and rapid photodetection. The atomically thin 2D materials act as a spacer for enhancing the gap-mode plasmons, and their short transit length in the vertical direction allows fast photocarrier transport. We demonstrate a high responsivity of up to 8.67 A/W with a high operation speed that exceeds 35 MHz under a 30 nW laser power. Spectral photocurrent, absorption, and a numerical simulation are used to verify the effectiveness of the gap-mode plasmons in the device. We believe that the design strategy proposed in this study can pave the way for a platform to overcome the trade-off between responsivity and response time.
Publisher
Tsinghua Univ Press
Issue Date
2021-05
Language
English
Article Type
Article
Citation

Nano Research, v.14, no.5, pp.1305 - 1310

ISSN
1998-0124
DOI
10.1007/s12274-020-3154-5
URI
http://hdl.handle.net/10203/281168
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0