Time response in tunneling to a pn junction

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dc.contributor.authorPark, JYko
dc.contributor.authorPhaneuf, RJko
dc.date.accessioned2021-02-03T07:10:10Z-
dc.date.available2021-02-03T07:10:10Z-
dc.date.created2020-12-26-
dc.date.issued2003-01-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.82, no.1, pp.64 - 66-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/280491-
dc.description.abstractWe report on the variation in the response time in scanning tunneling microscopy (STM) measurements across a Si pn junction, and its effect on STM images of such devices. The response time of the tip height subsequent to a stepwise change in the voltage at a fixed demanded current varies by almost two orders of magnitude across the junction, with the slowest response of nearly 80 ms corresponding to the tip-sample junction in strong inversion. Measurements at decreasing separation show an increase in response time up to a saturation point, consistent with screening due to the inversion charge. The slow response in regions where the tip-sample junction is in inversion explains observations of anomalously deep features in STM topography images and scan direction-dependent features in STM conductance maps. (C) 2003 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleTime response in tunneling to a pn junction-
dc.typeArticle-
dc.identifier.wosid000180134100022-
dc.identifier.scopusid2-s2.0-0037421350-
dc.type.rimsART-
dc.citation.volume82-
dc.citation.issue1-
dc.citation.beginningpage64-
dc.citation.endingpage66-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.1533849-
dc.contributor.localauthorPark, JY-
dc.contributor.nonIdAuthorPhaneuf, RJ-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusFORCE MICROSCOPY-
dc.subject.keywordPlusTRAPPED CHARGE-
dc.subject.keywordPlusSIO2-
dc.subject.keywordPlusSILICON-
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