Vertically-integrated 3-dimensional flash memory for high reliable flash memory and fabrication method thereof셀 신뢰성 향상을 위한 수직 집적형 삼차원 플래시메모리 및 그 제조 방법

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Disclosed are a vertically-integrated 3-dimensional flash memory for improving a reliability of cells and a fabrication method thereof. The fabrication method of the vertically-integrated 3-dimensional flash memory includes sequentially stacking a first insulating layer and a second insulating layer on a substrate to form a plurality of insulating layers, etching a portion of the insulating layers to expose an area of the substrate, forming a channel layer on a side surface of the etched insulating layers and on the substrate, forming a first macaroni layer on the channel layer, and forming a second macaroni layer on the first macaroni layer such that a side surface and a lower surface of the second macaroni layer are surrounded by the first macaroni layer.
Assignee
KAIST
Country
US (United States)
Application Date
2018-10-30
Application Number
16175480
Registration Date
2020-04-28
Registration Number
10636810
URI
http://hdl.handle.net/10203/280238
Appears in Collection
EE-Patent(특허)
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