800 nW 43 nV/√Hz neural recording amplifier with enhanced noise efficiency factor

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Advances in neuroscience research and clinical applications have increasingly called for the low-power low-noise simultaneous recording of neural signals from a large number of electrodes. The neural interface IC is one of the essential blocks to capture the weak neural signals. Presented is an energy-efficient low-noise neural recording amplifier with enhanced noise efficiency factor (NEF) for neural recording systems. Based on the conventional capacitive feedback and pseudo-resistor structure, the fully differential neural amplifier employs the current-reuse technique to achieve low noise and high current efficiency, consuming 800 nA at 1 V power supply. The measured thermal noise floor is 43nV/root Hz and the input-referred noise is 5.71 mu V-rms when integrated from 1 Hz to 50 kHz, leading to an NEF of 2.59. The entire neural amplifier has been fabricated using a 0.18 mu m CMOS technology, occupying an area of 0.05 mm(2)
Publisher
Institution of Engineering and Technology (IET)
Issue Date
2012-04
Language
English
Article Type
Article
Citation

Electronics Letters, v.48, no.9, pp.479 - 480

ISSN
0013-5194
DOI
10.1049/el.2012.0685
URI
http://hdl.handle.net/10203/279644
Appears in Collection
EE-Journal Papers(저널논문)
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